(Hong Kong)
Product Summary
The STU2NK100Z is a supermesh power MOSFET. It is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application.
Parametrics
STU2NK100Z absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 1000 V; (2)VGS Gate-source voltage: ± 30 V; (3)ID Drain current (continuous) at TC = 25 ℃: 1.85 A; (4)ID Drain current (continuous) at TC = 100 ℃: 1.16 A; (5)IDM Drain current (pulsed): 7.4 A; (6)PTOT Total dissipation at TC = 25 ℃: 70 W; Derating factor: 0.56 W/℃; (7)VESD(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ): 3000 V; (8)dv/dt Peak diode recovery voltage slope: 2.5 V/ns; (9)Tj Tstg Operating junction temperature, Storage temperature:-55 to 150 ℃.
Features
STU2NK100Z features: (1)Extremely high dv/dt capability; (2)100% avalanche tested; (3)Gate charge minimized; (4)Very low intrinsic capacitances; (5)Very good manufacturing repeatability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 STU2NK100Z |
STMicroelectronics |
MOSFET N-Ch, 1000V-6.25ohms Zener SuprMESH 1.85A |
Data Sheet |
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STU2NK100Z |
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MOSFET N-Ch, 1000V-6.25ohms Zener SuprMESH 1.85A |
Data Sheet |
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