Product Summary
The STP5NK50Z is a Zener-Protected SuperMESH Power MOSFET obtained through an extreme optimization of ST well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The applications of STP5NK50Z are: (1)High current, high speed switching; (2)Ideal for off-line power supplies, adaptors and PFC; (3)Lighting.
Parametrics
STP5NK50Z absolute maximum ratings: (1)VDS Drain-source Voltage (VGS = 0): 500 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 500 V; (3)VGS Gate- source Voltage: ± 30 V; (4)ID Drain Current (continuous) at TC = 25℃: 4.4 A; (5)ID Drain Current (continuous) at TC = 100℃: 2.7 A; (6)IDM Drain Current (pulsed): 17.6 A; (7)PTOT Total Dissipation at TC = 25℃: 70 W; Derating Factor: 0.56 W/℃; (8)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ): 3000 V; (9)dv/dt (1) Peak Diode Recovery voltage slope: 4.5 V/ns; (10)VISO Insulation Withstand Voltage (DC): 2500 - V; (11)Operating Junction Temperature: -55 to 150℃; (12)Storage Temperature: -55 to 150℃.
Features
STP5NK50Z features: (1)typical RDS(on) = 1.22 W; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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STP5NK50Z |
STMicroelectronics |
MOSFET N-Ch 500 Volt 4.4 A Zener SuperMESH |
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STP5NK50ZFP |
STMicroelectronics |
MOSFET N-Ch, 500V-1.22ohms Zener SuperMESH 4.4 |
Data Sheet |
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