(Hong Kong)
Product Summary
The STP11NM60N is an MDmesh power MOSFET. It is realized with the second generation of MDmesh Technology. This revolutionary Power MOSFET associates a new vertical structure to the strip layout to yield one of the lowest on-resistance and gate charge. STP11NM60N is therefore suitable for the most demanding high efficiency converters.
Parametrics
STP11NM60N absolute maximum ratings: (1)Drain-source voltage (VGS = 0): 800V; (2)Gate-source voltage: ±30V; (3)Drain current (continuous) at TC = 25℃:11A; (4)Drain current (continuous) at TC=100℃:8A; (5)Drain current (pulsed):44A; (6)Total dissipation at TC = 25℃:150W; (7)Derating factor:1.2W/℃; (8)Operating junction temperature:-65℃ to +150℃; (9)Storage temperature:-65℃ to +150℃.
Features
STP11NM60N absolute maximum ratings: (1)Drain-source voltage (VGS = 0): 600V; (2)Gate-source voltage: ±25V; (3)Drain current (continuous) at TC = 25℃: 10A; (4)Drain current (continuous) at TC=100℃: 6.3A; (5)Drain current (pulsed): 40A; (6)Total dissipation at TC = 25℃: 100W; (7)Derating factor: 0.8W/℃; (8)Operating junction temperature: -55℃ to +150℃; (9)Storage temperature:-55℃ to +150℃.
Diagrams
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 STP11NM60N |
STMicroelectronics |
MOSFET N-channel MOSFET |
Data Sheet |
Negotiable |
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STP11NM60ND |
STMicroelectronics |
MOSFET N-channel 600V, 10A FDMesh II |
Data Sheet |
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