Product Summary

The SST36VF3203-70-4I-EKE is a 16 Mbit (x8/x16) Concurrent SuperFlash. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes (Program or Erase) with a 2.7-3.6V power supply and conform to JEDEC standard pinouts for x8/x16 memories.

Parametrics

SST36VF3203-70-4I-EKE absolute maximum ratings: (1)Temperature Under Bias: -55 to +125℃; (2)Storage Temperature: -65 to +150 ℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Package Power Dissipation Capability (TA = 25℃): 1.0W; (6)Surface Mount Solder Reflow Temperature: 260℃ for 10 seconds; (7)Output Short Circuit Current: 50 mA.

Features

SST36VF3203-70-4I-EKE features: (1)Organized as 1M x16 or 2M x8; (2)Dual Bank Architecture for Concurrent Read/Write Operation; (3)Single 2.7-3.6V for Read and Write Operations; (4)Superior Reliability; (5)Low Power Consumption; (6)Hardware Sector Protection/WP# Input Pin; (7)Hardware Reset Pin (RST#); (8)Sector-Erase Capability; (9)Chip-Erase Capability; (10)Block-Erase Capability; (11)Erase-Suspend / Erase-Resume Capabilities; (12)Fast Read Access Time; (13)Security ID Feature; (14)Latched Address and Data; (15)Automatic Write Timing; (16)End-of-Write Detection; (17)CMOS I/O Compatibility; (18)Conforms to Common Flash Memory Interface (CFI); (19)JEDEC Standards.

Diagrams

SST36VF3203-70-4I-EKE functional block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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SST36VF3203-70-4I-EKE
SST36VF3203-70-4I-EKE

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Data Sheet

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