Product Summary

The M25P64-VME6TG is a 64Mbit (8M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The M25P64-VME6TG is organized as 128 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 32768 pages, or 8388608 bytes. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.

Parametrics

M25P64-VME6TG absolute maximum ratings: (1)TSTG, Storage Temperature: -65 to 150 ℃; (2)VIO, Input and Output Voltage (with respect to Ground): -0.5 to 4.0 V;(4)VCC, Supply Voltage: -0.2 to 4.0 V; (5)VESD, Electrostatic Discharge Voltage (Human Body model): -2000 to 2000 V.

Features

M25P64-VME6TG features: (1)64Mbit of Flash Memory; (2)Page Program (up to 256 Bytes) in 1.4ms(typical); (3)Sector Erase (512Kbit); (4)Bulk Erase (64Mbit); (5)2.7 to 3.6V Single Supply Voltage; (6)SPI Bus Compatible Serial Interface; (7)50MHz Clock Rate (maximum); (8)Electronic Signatures: JEDEC Standard Two-Byte Signature(2017h); RES Instruction, One-Byte, Signature(16h), for backward compatibility; (9)More than 100000 Erase/Program Cycles per Sector; (10)More than 20-Year Data Retention.

Diagrams

M25P64-VME6TG block diagram

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