Product Summary

The STP13NM60N is an N-channel Power MOSFET developed using the second generation of MDmesh technology. The STP13NM60N associates a vertical structure to the company strip layout to yield one of the lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Parametrics

STP13NM60N absolute maximum ratings: (1)VDS Drain-source voltage (VGS = 0): 600 V; (2)VGS Gate-source voltage: ± 25 V; (3)ID Drain current (continuous) at TC = 25 ℃: 11 A; (4)ID Drain current (continuous) at TC = 100 ℃: 6.93A; (5)IDM Drain current (pulsed): 44 A; (6)PTOT Total dissipation at TC = 25 ℃: 90 W; (7)dv/dt (3) Peak diode recovery voltage slope: 15 V/ns; (8)VISO: 2500 V; (9)Tstg Storage temperature: - 55 to 150 ℃; (10)Tj: 150 ℃.

Features

STP13NM60N features: (1)100% avalanche tested; (2)Low input capacitance and gate charge; (3)Low gate input resistance.

Diagrams

STP13NM60N Internal schematic diagram

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